KSMD3N60C 600v n-channel mosfet features ? 2.4a, 600v, r ds(on) = 3.4 ? @v gs = 10 v ? low gate charge ( typical 10.5 nc) ?low c rss ( typical 5 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effect transistors are produced using kersemi proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switched mode power s upplies, active power factor correction, electronic lamp ballasts based on half bridge topology. absolute maximum ratings thermal characteristics { { { z z z { { { z z z s d g symbol parameter ksmd3n60 unit v dss drain-source voltage 600 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 2.4 1.5 a a i dm drain current - pulsed (note 1) 9.6 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 150 mj i ar avalanche current (note 1) 2.4 a e ar repetitive avalanche energy (note 1) 5.0 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 50 0.4 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. unit r jc thermal resistance, junction-to-case -- 2.5 c/w r ja * thermal resistance, junction-to-ambient* -- 50 c/w r ja thermal resistance, junction-to-ambient -- 110 c/w * when mounted on the minimum pad size recommended (pcb mount) to-252 2014-7-3 1 www.kersemi.com
electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. i as = 2.4a, v dd = 50v, l=47mh, r g = 25 ? , starting t j = 25 c 3. i sd 3a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics device marking device package reel size tape width quantity KSMD3N60C KSMD3N60Ctm d-pak 380mm 16mm 2500 KSMD3N60C KSMD3N60Ctf d-pak 380mm 16mm 2000 symbol parameter conditions min. typ. max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a 600 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c--0.6--v/ c i dss zero gate voltage drain current v ds = 600v, v gs = 0v v ds = 480v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2.0--4.0v r ds(on) static drain-source on-resistance v gs = 10v, i d = 1.2a -- 2.8 3.4 ? g fs forward transconductance v ds = 40v, i d = 1.2a (note 4) -- 3.5 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 435 565 pf c oss output capacitance -- 45 60 pf c rss reverse transfer capacitance -- 5 8 pf switching characteristics t d(on) turn-on delay time v dd = 300v, i d = 3a r g = 25 ? (note 4, 5) -- 12 34 ns t r turn-on rise time -- 30 70 ns t d(off) turn-off delay time -- 35 80 ns t f turn-off fall time -- 35 80 ns q g total gate charge v ds = 480v, i d = 3a v gs = 10v (note 4, 5) -- 10.5 14 nc q gs gate-source charge -- 2.1 -- nc q gd gate-drain charge -- 4.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 3 a i sm maximum pulsed drain-source diode forward current -- -- 12 a v sd drain-source diode forward voltage v gs = 0v, i s = 2.4a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 3a di f /dt =100a/ s (note 4) -- 260 -- ns q rr reverse recovery charge -- 1.6 -- c package marking and ordering information KSMD3N60C 2014-7-3 2 www.kersemi.com
typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v notes : ? 1. 250 s pulse test 2. t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 246810 10 0 10 1 150 o c 25 o c -55 o c notes : ? 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 01234567 0 2 4 6 8 10 12 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.20.40.60.81.01.21.41.6 10 -1 10 0 10 1 150 ? notes : ? 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 100 200 300 400 500 600 700 800 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd note ; ? 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 024681012 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v note : i ? d = 10a v gs , gate-source voltage [v] q g , total gate charge [nc] KSMD3N60C 2014-7-3 3 www.kersemi.com
typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ? notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? notes : 1. v gs = 10 v 2. i d = 1.2 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 i d , drain current [a] t c , case temperature [ ] ? 10 0 10 -2 10 -1 10 0 10 1 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : ? 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : ? 1. z jc (t) = 2.5 /w m ax. ? 2. d uty f actor, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 KSMD3N60C 2014-7-3 4 www.kersemi.com
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switch ing test circuit & waveforms KSMD3N60C 2014-7-3 5 www.kersemi.com
peak diode recovery dv/d t test circuit & waveforms KSMD3N60C 2014-7-3 6 www.kersemi.com
mechanical dimensions d-pak KSMD3N60C 2014-7-3 7 www.kersemi.com
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